论文部分内容阅读
用Ｌｕｔｔｉｎｇｅｒ－ｋｏｈｎ有效质量理论研究了［００１］方向生长的（ＺｎＳｅ）ｎ／（ＺｎＳ）ｍ应变层超晶格的电子结构，并与前人的计算结果进行了比较．
The electron structure of (ZnSe) n / (ZnS) m strained layer grown in [001] direction has been studied by Luttinger-Kohn’s theory of effective mass and compared with previous calculations.