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P-N-P 型晶体管,由于表面效应严重,对外界的影响相当敏感,因而易出现反型及隧道效应,形成大的沟道漏电及低的击穿电压,如果按照通常采用的表面工艺,很难达到预定的电参数,更不能满足高稳定,高可靠的要求。我们试制的3CG22,是在通常平面工艺的基础上,采用掺杂氧化物作扩散源,首先单独进行沟道切断环的 p 型扩散,从而大大地改进了 P-N-P 型晶体管的电特性,
PNP-type transistors, due to the serious surface effects, the impact on the outside world is quite sensitive, so prone to reverse and tunneling effect, the formation of large channel leakage and low breakdown voltage, if in accordance with the commonly used surface technology, it is difficult to achieve the scheduled The electrical parameters, but can not meet the high stability, high reliability requirements. Our prototype 3CG22, based on the usual planar process, uses a doped oxide as a diffusion source. First, the p-type diffusion of the channel-cutting ring is performed alone, thereby greatly improving the electrical characteristics of the P-N-P transistor.