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报道了一款采用三级放大结构的Ku波段高效率GaN功率放大器芯片。放大器设计中通过电路布局优化改善功放芯片内部相位一致性,提高末级晶胞的合成效率,最终实现整个放大器功率及效率的提升。经匹配优化后放大器在14.6~17.0GHz频带内脉冲输出功率大于20 W,功率附加效率大于36%,最高39%。功率放大器芯片采用0.25μm GaN HEMT 101.6mm(4英寸)圆片工艺制造,芯片尺寸为2.3mm×1.9mm。
Reported a Ku-band high-efficiency GaN power amplifier chip with a three-stage amplification structure. Amplifier design through the circuit layout to improve the power amplifier chip internal phase consistency and improve the final cell synthesis efficiency, and ultimately to achieve the entire amplifier power and efficiency. The optimized output power of the amplifier in the 14.6 ~ 17.0GHz frequency band is greater than 20 W, the additional power efficiency is greater than 36% and the maximum is 39%. The power amplifier chip is fabricated using a 0.25μm GaN HEMT 101.6mm (4-inch) wafer process with a chip size of 2.3mm × 1.9mm.