砷化镓，化学式ＧａＡｓ，一种重要的化合物半导体材料，它是用镓和砷在高温和一定的砷蒸气压下人工合成的晶体。６０年代中期，砷化镓就已开始崭露头角，可以满足高频率、大功率的要求，并且能在比较高的温度环境里工作，它是目前做半导体光源最合适、最有发展前途的材料... Gallium arsenide, chemical GaAs, an important compound semiconductor material, is a crystal that is artificially synthesized using gallium and arsenic at high temperature and a certain arsenic vapor pressure. In the mid-1960s, gallium arsenide has already begun to emerge, can meet the requirements of high frequency and high power, and can work in a relatively high temperature environment. It is currently the most suitable and promising material for semiconductor light sources. .