By means of analyzing theⅠ-Ⅴcharacteristic curve of NiSi/n-Si Schottkyjunction diodes(NiSi/n-Si SJDs), abstracting the effective Schottky barrier height(φ_(B,eff)) and the idealfactor ofNiSi/n-Si SJDs and measuring the sheet resistance of NiSi films(R_(NiSi)),we study the effects of different dopant segregation process parameters,including impurity implantation dose,segregation annealing temperature and segregation annealing time,on theφ_(B,eff) of NiSi/ n-Si SJDs and the resistance characteristic of NiSi films.In addition,the changing rules ofφ_(B,eff) and R_(NiSi) are discussed. Abstract of the effective Schottky barrier height (φ_ (B, eff)) and the ideal factor ofNiSi / n-Si SJDs and measuring the sheet resistance of NiSi films (R_ (NiSi)), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the φ_ (B, eff) of NiSi / n-Si In addition, the changing rules of φ_ (B, eff) and R_ (NiSi) are discussed.