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ＧａＩｎＮＡｓ是一种直接带隙半导体材料，在长彼长（１．３０和 １．５５μｍ）光通信系统 中具有广阔的应用前景．通过调节 Ｉｎ和 Ｎ的组分，既可获得应变 ＧａＩｎＮＡｓ外延材料，也可制 备ＧａＩｎＮＡｓ与ＧａＡｓ匹配的异质结构，其波长覆盖范围为０．９－Ｎ２．０μｍ．ＧａＩｎＮＡｓ／ＧａＡｓ 量子阱激光器的特征温度为 ２００ Ｋ，远大于现行 ＧａＩｎＮＡｓＰ／ＩｎＰ激光器的特征温度（Ｔ０＝５０ Ｋ）． ＧａＩｎＮＡｓ光电子器件的此优异特性，对于提高光纤通信系统的稳定性、可靠寿命具有特 别重要的意义．由于ＧａＩｎＮＡｓ和具有高反射率（高达９９％）ＡＩ（Ｇａ）Ａｓ／ＧａＡｓ的分布布拉格 反射镜（ＤＢＲ）可生长在同－ＧａＡｓ衬底上，因此它是长波长（１．３０和 １．５５ μｍ）垂直腔面 发射激光器（ＶＣＳＥＬ）的理想材料．垂直腔面发射激光器是光纤通信、互联网和光信号处理的 关键器件． ＧａＡｓ基的超高速集成电路（ＩＣ）已有相当成熟的工艺．如果 ＧａＩｎＮＡｓ－ＶＣＳＥＬ 与 ＧａＡｓ－ＩＣ相结合，将使光电集成电路（ＯＥＩＣ）开拓出崭新的局面．本文还报道我们课题 组研制高质量 ＧａＮＡｓ／ＧａＡｓ超晶格和大应变 ＩｎＧａＡｓ／ＧａＡｓ量子阱结构取
GaInNAs are a kind of direct band gap semiconductor materials, which have broad application prospects in long optical communication systems (1.30 and 1.55μm). By adjusting the composition of In and N, both strained GaInNAs epitaxial materials and GaInNAs-GaAs heterostructures can be prepared with a wavelength range of 0.9 - N2.0μm. The characteristic temperature of GaInNAs / GaAs quantum well lasers is 200 K, much larger than the characteristic temperature (T0 = 50 K) of current GaInNAsP / InP lasers. This outstanding feature of GaInNAs optoelectronic devices is of particular importance for improving the stability and reliability of optical fiber communication systems. Since GaInNAs and Distributed Bragg Reflectors (DBRs) with AI (Ga) As / GaAs with high reflectivity (up to 99%) can grow on the same GaAs substrate, it is a long wavelength (1.30 and 1.55 μm) Ideal for vertical cavity surface emitting lasers (VCSELs). Vertical cavity surface emitting lasers are the key devices for optical fiber communication, internet and optical signal processing. GaAs-based ultra-high speed integrated circuits (ICs) have been well-established processes. The combination of GaInNAs-VCSEL and GaAs-IC will open up a whole new world of optoelectronic integrated circuits (OEICs). We also report that our research group has developed high-quality GaNAs / GaAs superlattices and large strain InGaAs / GaAs quantum well structures