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在集成电路制造中,通常采用各电学参数的测试值来衡量和评价工艺效果。一种可能的工艺后果是,出现了测量结果偏离预定目标的第I类工艺缺陷。传统上的基于SPC的工艺控制技术,不含工艺诊断的内容,在寻找造成工艺失效的原因时,存在着巨大的困难。本文对集成电路制造过程中所涉及到的几类重要参数间的关系,进行了详细的分析,由此确定造成诊断问题困难的根本原因,在于测试现象与工艺故障因素之间是多对多的关系。通过正交化的方法,可以将测试参数转化成为一组广义参数。广义参数与故障因素之间存在着一对一的联系。这样就找到了一种有效的,从异常的广义参数值确定失效原因的工艺诊断方法。本文对第I类工艺诊断的技术进行了讨论。在集成电路制造自自治系统中,对于I类工艺缺陷的纠正过程,也就是工艺结果不断向工艺目标趋近的过程。
In integrated circuit manufacturing, the test values of various electrical parameters are usually used to measure and evaluate the process performance. One possible consequence of the process is the occurrence of Category I process defects whose measured results deviate from the intended target. The traditional SPC-based process control technology, without the content of process diagnostics, presents great difficulties in finding the cause of process failure. This paper analyzes the relationship between several important parameters involved in the IC manufacturing process in detail, and thus determines the root cause of the difficulties in the diagnosis, is that there is a many-to-many test phenomenon and process failure factors relationship. Through orthogonalization, the test parameters can be transformed into a set of generalized parameters. There is a one-to-one relationship between generalized parameters and fault factors. In this way, an effective method of process diagnostics to determine the cause of failure from anomalous generalized parameter values was found. This article discusses the technique of type I process diagnostics. In the IC manufacturing autonomous system, the correction process of the I-type process defects, that is, the process of the process results toward the process goal.