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针对共振隧穿二极管近红外探测器焦平面阵列本征电流较大的问题,提出了一种通过对共振隧穿二极管近红外探测器双势垒结构(DBS)进行p型掺杂来抑制电流的方法,并用有限元软件对探测器进行了模拟。研究了单势垒p型掺杂、双势垒p型掺杂、双势垒结构p型掺杂及p型掺杂浓度对探测器本征电流抑制效果的影响。模拟结果显示,对双势垒结构进行p型掺杂后,探测器的隧穿峰值电流比非掺杂的双势垒结构的探测器的隧穿峰值电流小将近3个数量级。随着双势垒结构p型掺杂浓度的增加,器件本征电流会相应地减小。对器件进行了制备以及测试,结果表明,将双势垒结构进行p型掺杂,对探测器的本征电流有明显的抑制作用。
In order to solve the problem that the intrinsic current of the resonant tunneling diode near-infrared (NIR) detector focal plane array is large, a new method is proposed to suppress the current by p-type doping of the dual-barrier structure (DBS) Method, and the finite element software probe was simulated. The effects of single-barrier p-type doping, double-barrier p-type doping, double-barrier structure p-type doping and p-type doping concentration on detector intrinsic current suppression were investigated. The simulation results show that the tunneling peak current of the double-barrier structure is about three orders of magnitude smaller than that of the non-doped double-barrier structure. With the double-barrier structure of p-type doping concentration increases, the device intrinsic current will be reduced accordingly. The device was prepared and tested. The results show that p-type doping of double-barrier structure can significantly inhibit the intrinsic current of the detector.