为考察柔性薄膜GaInP/GaAs/InGaAs倒赝型三结(IMM3J)太阳电池的抗辐照性能,本文对其进行了1、3、5 MeV高能质子辐照.SRIM模拟结果表明,1、3、5 MeV质子辐照在IMM3J电池中造成均匀的位移损伤.光特性(LIV)结果表明,开路电压(Voc)、短路电流(Isc)和最大输出功率(Pmax)与质子注量呈对数退化规律.通过非电离能量损失(NIEL)将不同能量质子的注量转化为位移损伤剂量(DDD),结果显示,Voc和Pmax与DDD呈对数退化规律,而fsc遵循两种不同的退化规律.光谱响应测试证明,GaInP子电池具有优异的抗辐照性能,3个子电池中InGaAs(1.0 eV)子电池的抗辐照性能最差.“,”A flexible thin-film GaInP/GaAs/InGaAs inverted metamorphic triple-junc-tion (IMM3J) solar cell with conversion efficiency up to 32.47％ (air mass (AM) 0,1367 W/cm2) was prepared to meet the requirements of space solar cells for lightweight and high efficiency.High-energy proton radiation (1,3 and 5 MeV) was carried out to study its anti-irradiation performance.The SRIM simulation models indicate that 1,3 and 5 MeV proton irradiation will cause approximately uniform damage in IMM3J cells.The light IV (LIV) results show that the degradation of the open-circuit voltage (Voc),short-circuit current (Isc) and maximum output power (Pmax) follows the logarithm change of the proton fluence.The fluences of different energy protons were converted into the displacement damage dose (DDD) through non-ionizing energy loss (NIEL).The Voc and Pmax decrease with an approximative logarithmic change of DDD,while the Isc follows two different degradation behaviors.The spectral response tests prove that GaInP sub-cell has excellent anti-irradiation performance,but InGaAs (1.0 eV) sub-cell has the worst anti-irradiation resistance and is the current-limiting sub-cell during the 1,3 and 5 MeV protons irradiation continuously.