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SOI晶圆材料正在成为制备IC芯片的主要原材料。SOI材料的质量很大程度上取决于顶层硅及埋层的结构。利用TEM,系统地研究了3种实验条件下的SOI材料的微结构,对其顶层硅及埋层的厚度、厚度的均匀性进行了定量分析,对高剂量SIMOX样品中存在的硅岛密度进行了估算,并对顶层硅中的结构缺陷进行了观察分析。
SOI wafer material is becoming the main raw material for preparing IC chips. The quality of the SOI material depends very much on the structure of the top silicon and the buried layer. The microstructures of SOI materials under three experimental conditions were systematically investigated by TEM. The thickness and thickness uniformity of the top silicon and buried layers were quantitatively analyzed. The density of silicon islands present in high-dose SIMOX samples The estimation and structural defects in the top silicon were observed and analyzed.