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制做PIN结型射线敏感器件需要高阻的元素半导体材料——锗、硅单晶。本文主要介绍高阻锗、硅单晶通过锂的扩散、漂移而形成近本征区(Ⅰ)的方法,形成PIN结的机理和这种敏感器件的主要性能及用途。并且以同轴型锗(锂)γ射线敏感器件为例加以详细说明。
Made of PIN junction type of radiation sensitive devices need high resistance elemental semiconductor materials - germanium, silicon single crystal. This article mainly introduces the method of forming the near-intrinsic region (Ⅰ) of high-resistance germanium and silicon single crystal through diffusion and drift of lithium, forming the PIN junction mechanism and the main properties and applications of this sensitive device. And the coaxial germanium (lithium) γ-ray sensitive device as an example to describe in detail.