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This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure perfect contact between the seed layer and the top of pillars. Dry etching technique is used to remove the seed layer. The results show that Q -factor of the inductor is greatly improved by removing silicon underneath the inductor coil. The spiral inductor with line width of 50 μm has a peak Q -factor of 10 for the inductance of 2.5 nH at frequency of 1 GHz, and the resonance frequency of the inductor is about 8.5 GHz. For the inductor of conductor width 80 μm, the peak Q -factor increases to about 17 for inductance of 1.5 nH in the frequency range of 0.05-3.00 GHz.
This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The fabrication coil, fine polishing of the photoresist is used to simplify the processes and ensure perfect contact between the The results show that Q -factor of the inductor is greatly improved by removing silicon underneath the inductor coil. The results show that Q -factor of the inductor is greatly improved by removing silicon underneath the inductor coil. a peak Q -factor of 10 for the inductance of 2.5 nH at frequency of 1 GHz, and the resonance frequency of the inductor is about 8.5 GHz. For the inductor of conductor width 80 μm, the peak Q -factor increases to about 17 for inductance of 1.5 nH in the frequency range of 0.05-3.00 GHz.