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宽禁带半导体ZnO具有高达60 meV的激子束缚能,是一种极具潜力的短波长发光材料.在其p型掺杂存在巨大挑战的现状下,发展ZnO基异质结光发射器件不失为一种理想的选择.本文围绕p-n结型和MIS结型(金属-绝缘体-半导体)两类异质结构,介绍了ZnO紫外发光二极管(LED)和激光二极管(LD)的研究进展.针对ZnO异质结LED/LD存在的问题(如:发光效率低、稳定性差),重点介绍了通过引入ZnO单晶纳米线和金属局域表面等离激元,以及采用表面钝化等方法,改善器件性能方面的研究工作.
Wide bandgap semiconductor ZnO has an exciton binding energy of up to 60 meV and is a promising short-wavelength luminescent material.With the great challenge of p-type doping, the development of ZnO-based heterojunction light-emitting devices An ideal choice.In this paper, the research progress of ZnO ultraviolet light emitting diode (LED) and laser diode (LD) is introduced in this paper, focusing on the heterojunction of pn junction and MIS junction (metal-insulator- The problems of QL / LD (such as low luminous efficiency and poor stability) are mainly introduced by introducing ZnO single crystal nanowires and metal surface plasmon and using surface passivation to improve device performance In the area of research work.