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通过理论分析和PIC数值模拟,研究了阳极腔区结构对无箔二极管I-V特性的影响,得到了束流强度和结构影响因子的变化规律。研究发现,当阴阳极间距大于0时,无箔二极管的结构影响因子随着阳极腔区半径的增大而减小并逐渐趋于稳定,且对于较小的阴极外半径、较大的漂移管半径、较大的阴阳极间距,达到稳定后的结构影响因子越小,并给出了结构影响因子的可调节范围。在TPG700脉冲驱动源上开展了初步实验研究,对实验中的回流电子束进行数值模拟分析并去除其影响以后,实验结果很好地符合了理论分析结论。
Through the theoretical analysis and PIC numerical simulation, the influence of the structure of the anode cavity on the I-V characteristics of the non-foil diode is studied. The variation law of the beam intensity and the structural influencing factor is obtained. The results show that when the distance between anode and cathode is greater than 0, the influence factor of structure of foilless diode decreases and stabilizes with the increase of radius of anode cavity, and for smaller cathode outer radius, larger drift tube The larger the distance between the anode and the cathode, the smaller the influence factor of the structure after reaching a stable state, and the adjustable range of the structural influence factor is given. A preliminary experiment on TPG700 pulse driving source was carried out. After numerical simulation analysis and removal of the influence of the back-flow electron beam in the experiment, the experimental results are in good agreement with the theoretical analysis.