利用分段散射模型,借助Monte Carlo方法模拟了具有高斯分布特征的高能入射电子束(50keV≤E0≤100keV)在抗蚀剂中的散射过程,分别得到了不同曝光条件下的电子背散射系数和能量沉积分布, 模拟结果与实验结果很好地符合.在这一能量段,当电子束能量越高、抗蚀剂越薄、基片材料的原子序数越低时,邻近效应越弱.本文的模拟结果不仅能为高能电子束光刻工艺优化曝光条件、降低邻近效应提供理论指导,而且能为进一步的邻近效应的校正提供更精确的数据. The scattering process of high energy incident electron beam (50 keV≤E0≤100 keV) with Gaussian distribution was simulated by using the piecewise scattering model with Monte Carlo method. The electron backscattering coefficient The distribution of energy deposition, the simulation results are in good agreement with the experimental results. In this energy segment, the higher the electron beam energy, the thinner the resist and the lower the atomic number of the substrate material, the weaker the proximity effect. The simulation results not only provide theoretical guidance for optimizing the exposure conditions and reducing the proximity effect in the high-energy electron beam lithography process, but also provide more accurate data for the correction of further proximity effects.