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通过一种便捷的沉淀-胶溶方法,以硫酸氧钒、NH_3·H_2O和H_2O_23种无机化合物为原料制备VO_2薄膜。XRD结果表明,经过N_2下550℃热处理后,VO_2薄膜晶体为P2_1/c单斜相。SEM和台阶仪测试表明,薄膜表面由近球形颗粒致密分布组成,颗粒粒径约为23.5nm且膜厚为142nm,EDS能谱表明该薄膜仅含有V、O两种元素。变温电阻测试结果表明,VO_2薄膜具有良好的热致相变性能,相变温度为65℃。
VO_2 thin films were prepared from vanadyl sulfate, NH_3 · H_2O and H_2O_23 inorganic compounds by a convenient precipitation-peptization method. The XRD results show that the VO_2 thin film is monoclinic phase P2_1 / c after heat treatment at 550 ℃ under N2. The results of SEM and step spectroscopy showed that the surface of the film consisted of a dense distribution of nearly spherical particles with a particle size of about 23.5 nm and a film thickness of 142 nm. The EDS spectrum showed that the film contained only V and O elements. The results of the temperature-dependent resistance test show that the VO2 thin film has good thermal induced phase transformation, the phase transition temperature is 65 ℃.