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通过电化学工作站对2英寸(1英寸=2.54 cm)n型GaN晶圆进行了研究,结合X62型单面抛光机研究GaN电化学腐蚀与化学机械抛光(CMP)的一致性,并利用原子力显微镜(AFM)检测抛光后晶片的表面形貌。结果表明:采用H_2O_2和NaClO作为氧化剂时,GaN的腐蚀速率与氧化剂的体积分数呈反比,在固定H2O2体积分数的情况下,GaN腐蚀速率呈现酸性溶液优于碱性溶液、同时二者均优于中性溶液的现象。使用X62型单面抛光机对上述电化学腐蚀结果进行验证,得到与其相一致的规律,在体积分数为1%的H_2O_2和pH=5的情况下,GaN的去除速率最高,达到380.3 nm/h,同时抛光后的GaN表面粗糙度达到0.063 nm,扫描范围为5μm×5μm。研究表明电化学腐蚀和化学机械抛光具有一定的一致性,在实际应用中具有一定的借鉴意义。
A 2-inch (1 inch = 2.54 cm) n-type GaN wafer was studied by electrochemical workstation. The uniformity of GaN electrochemical corrosion and chemical mechanical polishing (CMP) was studied by X62 single-side polishing machine. Atomic force microscope (AFM) to examine the surface morphology of polished wafers. The results show that the corrosion rate of GaN is inversely proportional to the volume fraction of oxidant when H 2 O 2 and NaClO are used as oxidant. When the volume fraction of H 2 O 2 is fixed, the corrosion rate of GaN is superior to that of alkaline solution in both acidic solution and alkaline solution Neutral solution of the phenomenon. The X62 single-side polishing machine was used to verify the results of the electrochemical corrosion, and the law was consistent with it. Under the conditions of 1% H_2O_2 and pH = 5, the removal rate of GaN reached the highest at 380.3 nm / h , While polished GaN surface roughness of 0.063 nm, scanning range of 5μm × 5μm. Research shows that electrochemical corrosion and chemical mechanical polishing have certain consistency, and have certain reference significance in practical application.