腔面非注入区技术在808 nm GaAs/AlGaAs激光二极管列阵中的应用

来源 :激光与光电子学进展 | 被引量 : 0次 | 上传用户:tplian123
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在808nm GaAs/AlGaAs激光二极管列阵的前后腔面两端约25mm长的区域进行氦离子注入,使p型GaAs获得高的电阻率,形成腔面电流非注入区,以此来提高腔面灾变性损伤(COD)阈值。常规条宽100mm,含有19个发光单元的1cm列阵激光器的COD阈值功率为30W,而带有腔面非注入区的器件的最大输出功率达到了42.7W,没有发生失效。 The helium ion implantation is performed in a region of about 25 mm at both ends of the front and back cavity surfaces of the 808 nm GaAs / AlGaAs laser diode array to obtain high resistivity of the p-type GaAs to form a non-implanted region of the cavity current, thereby increasing Cavity catastrophic damage (COD) threshold. With a conventional strip width of 100 mm, a 1-cm array laser with 19 light-emitting cells had a COD threshold power of 30 W, whereas a device with a cavity-free implanted region had a maximum output power of 42.7 W with no failure.
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