论文部分内容阅读
报道了用于TD-SCDMA移动终端的高效率、高线性度HBT功率放大器的研制.该单片功率放大器采用两级放大结构,内部集成了输入匹配、级间匹配网络以及有源偏置电路,总芯片面积仅为0.91mm×0.98mm.该功率放大器采用单电源3.4V供电,在高、低功率模式下,PAE分别为43%和16%,增益达到了28.5以及24dB.当输入QPSK调制信号时,在低输出功率以及高输出功率状态下,1.6MHz/3.2MHz中心频偏处,ACPR分别低于-45dBc/-56dBc和-39dBc/-50dBc.本芯片尺寸小,电压稳定性高,性能优越,为低成本化的大规模生产提供了可能性.
Reported the development of a high efficiency and high linearity HBT power amplifier for TD-SCDMA mobile terminal.The amplifier has a two-stage amplifier structure, an internal input matching, an inter-stage matching network and an active bias circuit, The total chip area is only 0.91mm × 0.98mm. The PA power supply using a single 3.4V, in high and low power mode, PAE were 43% and 16%, gain reached 28.5 and 24dB. When the input QPSK modulation signal , The ACPR is lower than -45dBc / -56dBc and -39dBc / -50dBc respectively at 1.6MHz / 3.2MHz center frequency offset with low output power and high output power. The chip size is small, the voltage stability is high, the performance Superiority offers the possibility of low-cost mass production.