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上海宏力半导体制造有限公司(以下简称“宏力半导体”),专注于差异化技术的半导体制造领先企业,宣布成功建立国内首个0.18μm“超低漏电”(Ultra-Low-Leakage,ULL)嵌入式闪存工艺平台。0.18μm“超低漏电”嵌入式闪存工艺平台由宏力半导体自主开发完成。此次推出的“超低漏电”工艺平台在宏力半导体现有的0.18微米“低功耗”(Low-Power,LP)工艺平台上实现了进一步技术提升,其N/P晶体管在1.8伏操作电压下可分别输出与“低功耗”工艺等同的525/205μA/μm驱动电流,但其N/P管静态漏电分别仅为0.6pA/μm和0.2pA/μm,达到业界领先水平。
Shanghai Grace Semiconductor Manufacturing Co., Ltd. (“Grace Semiconductor”), a leading semiconductor manufacturing company focusing on differential technology, announced the successful establishment of the first 0.18μm Ultra-Low- Leakage, ULL) embedded flash technology platform. 0.18μm “ultra-low leakage ” embedded flash memory technology platform independently developed by Grace Semiconductor completed. The launch of the “Ultra-Low Leakage” technology platform further enhances Grace’s existing 0.18-micron “Low-Power” (LP) process platform. Its N / P transistor The 525 / 205μA / μm drive current equivalent to the “Low Power” process can be separately output at a 1.8V operating voltage but with a static leakage of only 0.6pA / μm and 0.2pA / μm for the N / P tube, respectively Industry-leading level.