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在0.18μm标准CMOS工艺模型下,利用亚阈值及深线性区MOS管的特性,设计了一种新颖的偏置电流产生电路,并采用此电路设计出一种具有高电源抑制比、低温度系数的全MOS型基准电压源。该电压源采用全MOS结构,不使用电阻,功耗超低。电源电压在0.9~3V变化时,该电压源均可正常工作,输出电压约为558mV。1.2V电源电压下,在-55℃~100℃温度范围内,该电压源的温度系数为2.3×10-5/℃,低频电源抑制比为-81dB,总功耗约为127nW。
In the 0.18μm standard CMOS process model, a novel bias current generation circuit is designed by using the characteristics of sub-threshold and deep-line MOS transistors. The circuit is designed with a high power supply rejection ratio, low temperature coefficient Of the total MOS voltage reference. The voltage source using all-MOS structure, no resistance, low power consumption. When the power supply voltage is changed from 0.9V to 3V, the voltage source can work normally and the output voltage is about 558mV. Under 1.2V supply voltage, the temperature coefficient of this voltage source is 2.3 × 10-5 / ℃ within -55 ℃ ~ 100 ℃, the low-frequency power supply rejection ratio is -81dB and the total power consumption is about 127nW.