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具有聚焦能力的双栅极场发射阵列(DGFEA)是两类最有发展前途的真空微电子器件(高分辨率场发射显示器和真空微电子微波、毫米波器件)的关键技术。本文简要比较了两种结构的DGFEA的主要性能和优缺点,叙述了双层栅极结构DGFEA的设计与模拟方法.从模拟计算获得的发射特性和聚焦性能可以看到:这种结构的DGFEA能获得几乎平行的场发射电子束,其最大发射电流密度可达到约500A/cm~2以上,是发展真空微电子微波、毫米波器件和其它强流电子注器件等较理想的电子源。
The dual-gate field emission array (DGFEA) with focusing capability is the key technology for two of the most promising vacuum microelectronic devices (high resolution field emission displays and vacuum microelectronics microwave and millimeter wave devices). This article briefly compares the main performance and advantages and disadvantages of the two structures of DGFEA, and describes the design and simulation of the DGFEA double-gate structure.From the emission characteristics and focusing performance of simulation calculations can be seen: DGFEA energy The nearly parallel field emission electron beam can reach a maximum emission current density of about 500A / cm ~ 2 or more. It is an ideal electron source for the development of vacuum microelectronic microwaves, millimeter wave devices and other strong current electron injection devices.