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为了克服用共面探针测量光探测器芯片的高频特性对电极结构的限制 ,提出了一种精确测量光探测器芯片的阻抗和频率响应的新方法。对于任意电极结构的探测器芯片 ,首先把芯片与测试夹具连接 ,通过一系列的校准和测量 ,可以得到夹具的S参数 ,进而利用微波理论扣除整个测试夹具的影响 ,得到探测器芯片的S参数 ,计算出光探测器的阻抗和频率响应特性。用该方法对P极和N极共面的光探测器芯片的阻抗和频率响应特性进行了测量 ,并与直接用微波探针测量的结果相比较 ,验证了该方法在 5 0MHz～ 16GHz的频率范围内的正确性。
In order to overcome the limitations of the electrode structure by measuring the high frequency characteristic of the photodetector chip with the coplanar probe, a new method for accurately measuring the impedance and the frequency response of the photodetector chip is proposed. For a detector chip with any electrode structure, the chip is firstly connected with the test fixture. Through a series of calibration and measurement, the S parameter of the fixture can be obtained, and then the S parameter of the detector chip can be obtained by deducting the influence of the entire test fixture with the microwave theory , Calculate the photodetector impedance and frequency response characteristics. The impedance and frequency response characteristics of the photodetector chip with P-pole and N-pole coplanar were measured by this method. Compared with the direct measurement by microwave probe, it was verified that the proposed method has better performance in frequency range from 50MHz to 16GHz Correctness within the scope.