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利用光学发射谱技术对直流辉光放电等离子体增强的化学气相沉积氮化碳薄膜过程中的等离子体进行了原位诊断 ,结果表明主要的辐射有N2 的第二正系跃迁、N+2 的第一负系跃迁、CN和NH的紫外跃迁。研究了气源中氢气含量、放电电流及沉积气压的变化对N2 (337 1nm) ,N+2 (391 4nm)和CN(388 3nm)辐射强度的影响 ,并在此基础上探讨了这几种跃迁的激发机制 ,其结果为氮化碳合成中优化沉积参数、控制实验过程提供了依据
The in situ diagnosis of plasma in CVD process of carbon nitride thin films enhanced by DC glow discharge plasma was performed using optical emission spectroscopy. The results show that the main radiation has the second positive transition of N2, The first negative transition, the UV transition of CN and NH. The effects of hydrogen content, discharge current and deposition pressure on the radiant intensities of N2 (337 1nm), N + 2 (391 4nm) and CN (388 3nm) were studied. Based on these results, The mechanism of the excitation of the transitions provides the basis for optimizing deposition parameters and controlling the experimental process in carbonitride synthesis