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采用低能Ar离子束辅助沉积方法,在Mo/Si(100)基底上制备Ag膜。实验发现,用Ar离子束溅射沉积的Ag膜呈(111)择优取向。若在溅射沉积Ag膜的同时,用能量为500eV的Ar离子束沿衬底法线方向对Ag膜进行辅助轰击,当离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子到达比增大到0.18时,Ag膜呈(111)和(100)混合晶向。若Ar离子的入射角为35.26°,离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子比增大到0.18时,Ag膜呈(111)和微弱的(100)混合晶向。若Ar离子的入射角为54.7°,离子/原子到达比为0.06时,沉积的Ag膜呈很强的(111)择优取向。
Ag films were prepared on Mo / Si (100) substrates using a low energy Ar ion beam assisted deposition method. It was found experimentally that the Ag film deposited by Ar ion beam sputtering showed a preferential orientation of (111). If the Ag film is deposited by sputter deposition, the Ag film is assisted bombardment along the normal direction of the substrate with an Ar ion beam with an energy of 500 eV, and the (111) preferred orientation of the Ag film is obtained when the ion / atom arrival ratio is 0.06. When the ion / atomic arrival ratio increased to 0.18, the Ag film showed a mixed orientation of (111) and (100). The Ag film shows a (111) preferred orientation when the incident angle of Ar ion is 35.26 ° and the ion / atom arrival ratio is 0.06. The Ag film is (111) and faint (100) when the ion / atomic ratio increases to 0.18 ) Mixed crystal orientation. If the incident angle of Ar ions is 54.7 ° and the ion / atom arrival ratio is 0.06, the deposited Ag film exhibits a strong (111) preferred orientation.