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本文提出了一个适用于普通时域电路模拟程序的MESFET模型。模型参数的赋值是由实验数据或较细致的器件分析得来的。该模型比早期的模型完善,过去的模型忽略了渡越时间和其他效应。文中讨论了一个集成电路(IC)设计实例。
This paper presents an MESFET model suitable for general time-domain circuit simulation. Assignment of model parameters is based on experimental data or more detailed device analysis. The model is more complete than the earlier model, which neglected the transit time and other effects. This article discusses an integrated circuit (IC) design examples.