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在表面栅和埋栅结构的基础上 ,提出了一种制造静电感应晶体管的新型结构 ,平面型埋栅结构 .用普通的平面工艺实现了具有高击穿电压的埋栅结构 ,避免了工艺难度较大的二次外延和台面腐蚀工艺 .实验结果表明该结构可用于制造各种功率静电感应器件 ,其优点是具有高的击穿电压和高的阻断增益 ,并讨论了平面型埋栅结构的主要特点和制造工艺 .
Based on the surface gate and buried gate structure, a novel structure for fabricating electrostatic induction transistor and a planar buried gate structure are proposed, and a buried gate structure with high breakdown voltage is realized by a common planar process, which avoids the difficulty of the process Large secondary epitaxy and mesa corrosion process.The experimental results show that the structure can be used to manufacture a variety of power electrostatic induction devices, which has the advantages of high breakdown voltage and high blocking gain, and discusses the main features of planar buried gate structure Features and manufacturing processes.