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普通的厚膜组件（MCM－C）已不能满足在军事与空间领域大量专用集成电路（ASIC）封装要求。通常，ASIC芯片是为高频设计的，具有较高的热损耗，有较多的输入／输出线，从而要求高密度互连。为了鉴别出可能采用的方案，研究了几种MCM技术，并进行了比较。模拟和测试的结果显示，一种新工艺（基于具有光成象能力的厚膜材料）可提供可靠性和较好的成本效果，取代先进的薄膜聚酰亚胺多层或硅－硅互连。本文将讨论一种新的封装工序，概括介绍高密度（0．127mm～0．254mm间距）、高频（2．5～600MHz）MCM的三个代表例。
Ordinary thick film modules (MCM-C) have failed to meet the large number of application specific integrated circuit (ASIC) packaging requirements in military and space applications. Typically, ASIC chips are designed for high frequencies, have high heat losses, have more input / output lines, and require high-density interconnects. In order to identify possible solutions, several MCM techniques were studied and compared. Simulation and testing results show that a new process (based on thick-film materials with photoimaging capabilities) can provide reliability and cost effectiveness, replacing advanced thin-film polyimide multilayer or silicon-silicon interconnects . This article will discuss a new packaging process that outlines three representative examples of high density (0.127 mm to 0.254 mm pitch) and high frequency (2.5 to 600 MHz) MCMs.