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北美砷化镓会议录论文集中的“用硒离子注入制造砷化镓场效应晶体管”这篇文章介绍了罗克韦尔国际科学中心采用离子注入技术取代外延生长技术形成有源层,制造出接近于理论特性的低噪声砷化镓场效应晶体管。对于栅长0.9微米的器件,论证了增益与频率的特性。结果表明,最大振荡频率超过50千兆赫。在10千兆赫下,典型噪声系数为3.5分贝,而增益为7分贝。经挑选,有些器件,在10千兆赫下,噪声系数可低达3.3分贝,而最大可用增益为11.5分贝左右。J.A.Higgins 等人宣称“对于相同几何图形的 FET,1976年 Hewitt 等人计算出了噪声系数的最佳值为3.5分贝,这就证明离子注入的晶体管与理论预计的特性相符。”
The article “Making GaAs Field Effect Transistors with Selenium Ion Implantation” in the North American Gallium Arsenide Conference Proceedings introduced the Rockwell International Science Center to replace the epitaxial growth technique with ion implantation to form the active layer to create a near Low-Noise Gallium Arsenide Field-Effect Transistor with Theoretical Characteristics. For devices with a gate length of 0.9 microns, the gain and frequency characteristics are demonstrated. The results show that the maximum oscillation frequency exceeds 50 gigahertz. At 10 GHz, the typical noise figure is 3.5 dB with a gain of 7 dB. Selected, some devices, at 10 GHz, the noise figure can be as low as 3.3 dB, while the maximum available gain is about 11.5 dB. J.A. Higgins et al. Declared that “for the same geometry FET, Hewitt et al. Calculated a best noise figure of 3.5 dB in 1976, demonstrating that ion-implanted transistors are consistent with the theoretical predictions.”