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利用Gibbs自由能判据计算了室温和1000 K温度下Ti-Al体系非晶形成成分区间。计算结果表明,Ti-Al非晶形成区间为10%~80%(原子比)Ti。在计算结果的指导下,设计薄膜的成分区间,利用非平衡多靶溅射沉积开展了Ti-Al非晶薄膜在Si和U基上的形成研究。实验在不同脉冲偏压、沉积速率、基体初始温度下进行,薄膜组元成分通过不同靶材的沉积速率来控制完成。利用X射线衍射、扫描电镜、俄歇分析谱仪分析了薄膜的组织结构、表面及界面形貌和成分区间。结果表明,Ti-Al体系在U基上未能获得非晶薄膜,而在Si基上获得了非晶薄膜。所选工艺下,Si基上Ti-Al非晶薄膜形成的成分区间为25%~40%Ti,60%~75%Al。为了能在U基上获得非晶薄膜,加入了第三组元Ni,成功地获得了Ti-Al-Ni非晶薄膜。
The Gibbs free energy criterion was used to calculate the amorphous component interval of Ti-Al system at room temperature and 1000 K. The calculated results show that the Ti-Al amorphous formation range is 10% ~ 80% (atomic ratio) Ti. Under the guidance of the calculated results, the formation of Ti-Al amorphous films on Si and U-based films was investigated by non-equilibrium multi-target sputtering deposition in the compositional interval of the films. Experiments were carried out under different pulse bias, deposition rate and substrate initial temperature. The composition of thin films was controlled by the deposition rate of different targets. The structure, surface and interface morphology of the films were analyzed by X-ray diffraction, scanning electron microscopy and Auger spectroscopy. The results show that the Ti-Al system failed to obtain an amorphous film on the U-base while an amorphous film was obtained on the Si-base. Under the selected process, the compositional range of the Ti-Al amorphous film formed on the Si base is 25% -40% Ti and 60% -75% Al. In order to obtain an amorphous film on the U-base, a third component Ni was added and a Ti-Al-Ni amorphous film was successfully obtained.