Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures

来源 :中国科学:物理学、力学、天文学英文版 | 被引量 : 0次 | 上传用户：mahuan616520

【摘要】

：

The thermal stability of F ion-implanted isolated AlGaN/GaN heterostructures was investigated,with B ion-implanted isolation shown for comparison.The sheet resi

【作者】

：

Shuxin Tan Xuguang Deng Boshun

【机构】

：

SchoolofElectronicsandInformation,KeyLaboratoryofNanodevicesandApplications,DepartmentofPhysics

【出处】

：

中国科学:物理学、力学、天文学英文版

【发表日期】

：

2018年12期

【关键词】

：

ALGAN/GAN heterostrueture F-ion IMPLANTATION thermal stability

【基金项目】

：

National Natural Science Foundation of China (Grant Nos.61504071,and 61474133),the Natural Science Foundation of Nantong University (Grant No.03081003),the Research Project of Beijing University of Ch

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The thermal stability of F ion-implanted isolated AlGaN/GaN heterostructures was investigated,with B ion-implanted isolation shown for comparison.The sheet resistance of as-implanted samples with F ions was lower than that with B ions due to enhanced hopp

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Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures

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