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测量获得了金刚石压腔系统中碳化钨基座单轴下的总压应力(F/N)-应变(ε/μm/m)关系:F=3.395ε+12.212(R~2=0.999 9),研制出可以在定量单轴压力下原位测试样品谱学特征的装置。利用该装置测试了单轴压力在2548.664 MPa下单晶硅片的拉曼谱峰。测试结果表明,当压力垂直于单晶硅样品[100]结晶面时,样品的519.12cm~(-1)谱峰随压力增大有规律的向高频方向偏移,谱峰频移量(Δω/cm~(-1))与压力(σ/MPa)的增加呈显著的线性关系,线性方程为σ=365.80Δω+10.19。式中的常数项在一定程度上反应了样品本身存在的残余应力;一次项系数与理论计算得到的结果存在一定差异,可能是由于本实验考虑了样品受力的定向性。Δω-σ线性关系式中的常数项可能代表两层含义:一是实验过程中存在的误差;二是在一定程度上反应了硅片本身存在的内应力的大小。
The total compressive stress (F / N) -strain (ε / μm / m) under uniaxial tension of tungsten carbide pedestal in the diamond cavity system was measured and measured: F = 3.395ε + 12.212 (R ~ 2 = 0.999 9) A device was developed to test the spectral characteristics of a sample in situ under a quantitative uniaxial pressure. The Raman spectra of monocrystalline silicon wafers with uniaxial pressure at 2548.664 MPa were tested by this device. The results show that when the pressure is perpendicular to the crystal plane of single-crystal silicon [100], the peak of 519.12cm ~ (-1) shifts with the increase of pressure to the high-frequency direction. The frequency shift Δω / cm ~ (-1)) and pressure (σ / MPa) increased linearly with the linear equation σ = 365.80Δω + 10.19. The constant term in the equation reflects the residual stress existing in the sample itself to a certain degree. The difference between the primary coefficient and the theoretical calculation may be due to the fact that the orientation of the sample force is considered in this experiment. The constant term in the linear relationship of Δω-σ may represent two meanings: one is the error existing in the experiment; the other is the response to the intrinsic stress existing in the silicon wafer to a certain extent.