在无汞敏化的条件下,采用能发射高能光子的氘灯直接照射激活的方法,进行了在低温光—CVD生长SiO_2薄膜的尝试。业已证实,在衬底温度为84℃时薄膜已开始生长,但要获得高质量薄膜,衬底温度需高于170℃。在170℃左右薄膜的淀积速率约为100(?)/min。折射率为1.44～1.46。在衬底温度高于175℃时,用这种方法淀积的薄膜没有出现与红外吸收峰有关的Si—H键。在相同温度下用热—CVD法淀积的膜有红外吸收峰。 In the absence of mercury sensitization, an attempt was made to grow SiO 2 thin films by low temperature photo-CVD using a deuterium lamp capable of emitting high energy photons. It has been confirmed that the film has started to grow at a substrate temperature of 84 ° C. However, to obtain a high quality film, the substrate temperature needs to be higher than 170 ° C. The deposition rate of the film at about 170 ° C is about 100 (?) / Min. Refractive index of 1.44 ~ 1.46. Films deposited in this way do not exhibit Si-H bonds associated with the infrared absorption peak at substrate temperatures above 175 ° C. Films deposited by the thermal-CVD method at the same temperature have infrared absorption peaks.