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在溶胶-凝胶工艺获得高质量Bi4Ti3O12薄膜的基础上,制备了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管.研究了Si基Bi4Ti3O12薄膜的生长特性及其对铁电薄膜/硅的界面状态和铁电场效应晶体管存储特性的影响.研究表明,在合理的工艺条件下可以获得具有较高c-轴择优取向的纯钙钛矿相Si基Bi4Ti3O12铁电薄膜并有利于改善Bi4Ti3O12/Si之间的界面特性;顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力;器件的转移(Isd-VG)特性曲线显示Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管具有明显的栅极化调制效应.
Ag / Bi4Ti3O12 gate n-channel ferroelectric field-effect transistors were fabricated on the basis of sol-gel process to obtain high quality Bi4Ti3O12 thin films.The growth characteristics of Bi4Ti3O12 thin films and their interfacial states with ferroelectric thin films / Ferroelectric field effect transistors.The results show that pure perovskite phase Bi4Ti3O12 ferroelectric thin films with high c-axis preferred orientation can be obtained under reasonable process conditions and are beneficial to improve the Bi4Ti3O12 / Si The CV characteristic curve and CT curve of clockwise hysteresis indicate that the Ag / Bi4Ti3O12 gate n-channel ferroelectric field-effect transistor has the polarization storage effect and a certain polarization charge retention capability. The device’s transfer (Isd-VG) characteristic curve It is shown that the Ag / Bi4Ti3O12 gate n-channel ferroelectric field-effect transistor has obvious gate modulation effect.