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针对传统方法制备类金刚石(DLC)膜存在的3～5μm波段红外透过率低这一难题,采用飞秒脉冲激光沉积(PLD)法在红外材料硅基底上镀制DLC膜。重点考查了靶材与基片的间距、背景气压、激光单脉冲能量、负偏压、温度以及掺硅量等工艺参数对其透过率的影响,经过大量的实验与优化分析,总结出一套有效的脉冲激光沉积DLC膜工艺来制备优良的光学保护增透膜。相比传统工艺,大大提高了3～5μm波段的平均红外透过率,在硅基底上单面镀制DLC膜的最高红外透过率达到了68.2%,与理论最高值的68.7%仅相差0.5%。
Aiming at the low infrared transmittance of 3 ~ 5μm band in DLC film prepared by traditional method, DLC film was deposited on silicon substrate of infrared material by femtosecond pulsed laser deposition (PLD) method. Focus on the target and substrate spacing, background pressure, laser pulse energy, negative bias, temperature and silicon content and other process parameters on the transmittance, after a large number of experiments and optimization analysis, summed up a Effective pulsed laser deposition DLC film process to prepare excellent optical protection AR coating. Compared with the traditional process, the average infrared transmittance in the 3-5 μm band is greatly increased. The maximum infrared transmittance of the DLC film coated on the silicon substrate reaches 68.2%, which is only 0.5% of the theoretical maximum of 68.7% %.