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依据Ga,A1在Si和SiO2中的扩散行为和特性,采用SiO2/Si系统,利用磁控装置精确控制Ga掺杂量,实现镓铝双质掺杂在同一扩散炉中经一次高温连续完成.该项掺杂技术能实现Si中的高均匀掺杂,扩散参数具有良好的重复性和一致性,可获得较理想的杂质浓度分布.Ga,Al与Si的共价半径相接近,高温后又采取缓慢降温等措施,能明显减少晶格缺陷,提高少子寿命,降低压降.研究了受主双质掺杂与晶闸管参数之间的关系,并对镓铝双质掺杂提高晶闸管性能的机理进行了深入的分析与讨论.研究表明,镓铝双质受主掺杂有利于提高晶闸管的耐压水平和浪涌能力,能明显改善电流特性、触发特性和动态特性,优于其他受主掺杂技术.
According to the diffusion behavior and properties of Ga and Al in Si and SiO2, using the SiO2 / Si system, the amount of Ga doping is precisely controlled by the magnetron device to achieve the complete doping of Ga-Al doping in the same diffusion furnace at a high temperature. The doping technology can achieve high uniform doping in Si, and the diffusion parameters have good repeatability and consistency, and the ideal impurity concentration distribution can be obtained. The covalent radii of Ga, Al and Si are close to each other, Take slow cooling and other measures can significantly reduce the lattice defects and improve the life of young children and reduce the pressure drop.The relationship between the acceptor doping and the thyristor parameters were studied and the mechanism of doping AlGaAs to improve the thyristor performance The research shows that the doping of Gallium Al-Mg-Al-D receptor is beneficial to improve the withstand voltage and surge capacity of thyristors, and can obviously improve the current characteristics, the triggering characteristics and the dynamic characteristics, which is better than that of other acceptor-doped Miscellaneous techniques.