采用 SOI/CMOS工艺成功地研制出沟道长度为 0 .8μm的 SOI器件和环振电路 ,在 5V和 3V电源电压时 51级环振的单门延迟时间分别为 82 ps和 2 81 ps,速度明显高于相应的体硅电路 .由于采用硅岛边缘注入技术 ,寄生边缘管得到较好的抑制 .对沟道宽度对 SOI器件特性的影响进行了讨论 .实验表明 SOI器件是高速和低压低功耗电路的理想选择 . SOI devices and ring-oscillator circuits with channel length of 0.8 μm were successfully developed by SOI / CMOS process. The single-gate delay time of 51-level ring oscillator at 82 V and 3 V was 82 ps and 2 81 ps, respectively Is significantly higher than the corresponding bulk silicon circuit.Because of the island edge injection technology, the parasitic edge tube is better suppressed.The influence of the channel width on the characteristics of the SOI device is discussed.Experiments show that the SOI device is high speed and low voltage low power Ideal for circuit consumption.