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利用液相外延（ＬＰＥ）技术研制出室温连续工作的ＩｎＧａＡｓＰ／ＩｎＰ分别限制单量子阶（ＳＣＨ－ＳＱＷ）双沟平面掩埋（ＤＣ－ＰＢＨ）激光器。室温下，腔面未镀膜的激光器最低阈值电流为２３ｍＡ（激光器腔长为２００μｍ，ＣＷ，１３℃）。激射波长为１．４８μｍ，最高输出功率达１８．８ｍＷ（Ｌ＝２００μｍ．ＣＷ，１８℃）。脉冲输出峰值功率大于５０ｍＷ（脉冲宽度１μｓ、频率１ｋＨｚ），未见功率饱和。量子阱的阱宽为２０ｎｍ［１］．
The InGaAsP / InP confined single-quantum-well (SCH-SQW) double-trench planar buried (DC-PBH) laser was successfully fabricated by liquid-phase epitaxy (LPE) The lowest threshold current of the uncoated lasers at room temperature is 23 mA (laser cavity length 200 μm, CW, 13 ° C). The lasing wavelength was 1.48μm and the maximum output power was 18.8mW (L = 200μm.CW, 18 ℃). Pulse output peak power is greater than 50mW (pulse width 1μs, frequency 1kHz), no power saturation. The quantum well has a well width of 20 nm [1].