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采用化学共沉淀法成功地制备了ZrO2掺杂的SnO2超微粉，用丝绸印刷法制备了 厚膜型气敏传感材料，并制成了平面型气敏元件.研究了不同掺杂量、不同烧结温度的厚膜 材料的气敏性能.实验表明：掺杂降低了纯SnO2厚膜的电阻及敏感温区的温度，并且烧结 温度对气敏性能影响较大.在200 ℃下，掺杂量为1%的ZrO2-SnO2厚膜对浓度为2×10 -5的H2S气体具有较好的灵敏度（β=5.2），响应恢复时间均＜1 min.
The ZrO2 doped SnO2 ultrafine powder was successfully prepared by chemical coprecipitation method, and the thick film gas sensing material was prepared by silk printing method, and the planar gas sensor was fabricated. Sintering temperature of the thick film material.The experimental results show that: the doping reduces the resistance of the pure SnO2 thick film and the temperature of the sensitive temperature zone, and the sintering temperature has a greater impact on the gas sensitivity performance.At 200 ℃, the doping amount The 1% ZrO2-SnO2 thick film showed good sensitivity to H2S gas concentration of 2 × 10 -5 (β = 5.2) and the response recovery time was less than 1 min.