针对应变Si_(1-x)Ge_x的应变致价带分裂和重掺杂对裂值的影响,提出了该合金价带结构的等价有效简并度模型。模型中考虑了非抛物线价带结构。应用这个模型,计算了赝晶生长在<100>Si衬底上的p型Si_(1-x)Ge_x应变层的重掺杂禁带窄变,发现当杂质浓度超过约2～3×10~(19)cm~(-3)后,它在某一Ge组分下得到极大值,而当掺杂低于此浓度时,它则随Ge组分的增加单调下降。与实验报道的对比证实了本模型的有效性。 Aiming at the effect of strain splitting and heavy doping on the crack value of strained Si_ (1-x) Ge_x strain, an equivalent effective degeneracy model for the valence band structure of the alloy is proposed. The model considers the non-parabolic valence band structure. Using this model, we calculated the narrow bandgap of the heavily doped bandgap in the p-type Si_ (1-x) Ge_x strain layer grown on pseudomorphic <100> Si substrate and found that when the impurity concentration exceeds about 2 ~ 3 × 10 ~ (19) cm ~ (-3), it reaches a maximum value under a certain Ge component. When the doping concentration is lower than this concentration, it decreases monotonously with the increase of Ge component. The comparison with the experimental report confirms the effectiveness of this model.