日本京都大学研究人员表示,他们以碳化硅为材料开发出了能耐受20 kV电压的晶体管,这一技术具有世界先进水平。变电设备等器材中使用的晶体管主流材料是硅,硅能承受的最大电压只有6 000～8 000 V。京都大学副教授须田淳领导的研究小组将碳和硅 Researchers at Kyoto University in Japan say they have developed transistors that can withstand 20 kV with silicon carbide, a world-class technology. Transistors and other equipment used in the mainstream of the transistor material is silicon, silicon can withstand the maximum voltage of only 6 000 ~ 8 000 V. A team led by Prof. Sita Atsuta, an associate professor at Kyoto University, will put carbon and silicon