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外延砷化镓的载流子浓度和迁移率随 AsCl_3—Ga—H_2流动系统中的三氯化砷流量而改变。业已用比较大的三氯化砷流量制成了高纯外延层。当三氯化砷流量分别为3.2×10~(-5)克分子/分和1.1×10~(-4)克分子/分时,可分别得到载流子浓度为2×10~(15)厘米~(-3)和2.5×10~(14)厘米~(-3)的外延层。在外延生长以前用砷饱和45克镓,生长参数是:镓温920℃;生长温度735℃;氢气流量250毫升/分。
The carrier concentration and mobility of the epitaxial gallium arsenide vary with the flow of arsenic trichloride in the AsCl 3 -Ga-H 2 flow system. High-purity epilayers have been made using relatively large amounts of arsenic trichloride. When the flow rate of arsenic trichloride is 3.2 × 10 -5 mol / L and 1.1 × 10 -4 mol / min respectively, the carrier concentration can be 2 × 10-15. Cm ~ (-3) and 2.5 × 10 ~ (14) cm ~ (-3). 45 g of gallium was arsenic-saturated before epitaxy. The growth parameters were: gallium temperature 920 ° C; growth temperature 735 ° C .; hydrogen flow rate 250 ml / min.