研究了化学气相条件下金刚石在非均匀研磨硅基底表面及镜面基底和均匀研磨基底边缘及角域处的成核行为。发现ＣＶＤ金刚石成核不仅依赖于沉积区缺陷，更主要由缺陷的锐度决定，即缺陷加强ＣＶＤ金刚石成核的锐度效应。在对无序碳上ＣＶＤ金刚石成核研究的基础上，讨论了ＣＶＤ金刚石成核的机理，并由此阐明了各种表面预处理及负偏压等增强ＣＶＤ金刚石成核的微观过程。 The nucleation behavior of diamond under the condition of chemical vapor was investigated on the surface of non-uniformly ground silicon substrate, the mirror substrate and the uniform grinding substrate. It is found that CVD diamond nucleation depends not only on the deposition area defects but also on the sharpness of the defects, ie, the sharpness effect of the defects on the CVD diamond nucleation. Based on the study of CVD diamond nucleation on disordered carbon, the mechanism of CVD diamond nucleation is discussed. The microscopic process of enhancing CVD diamond nucleation by various surface pretreatments and negative bias is elucidated.