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以GaP为靶材采用射频磁控溅射法制备GaP红外光学薄膜,通过保持ArⅠ750nm发射光谱线强度不变获得了不同工艺参数,并对沉积过程进行了计算机模拟.功率较小、气压较大时,Ga和P的溅射率、输运效率及沉积到衬底时的能量均较小,Ga的溅射率及输运效率均大于P的,使薄膜沉积速率较低、薄膜中Ga的含量大于P的,GaP薄膜产生较大吸收.功率较大、气压较小时,Ga和P的溅射率、输运效率及沉积到衬底时的能量均增大,Ga的溅射率大于P的、但其输运效率小于P的,使GaP薄膜的沉积速率增大、薄膜中Ga与P的含量接近化学计量比,GaP薄膜的吸收降低,因此有利于制备厚度较大的GaP薄膜.
GaP as the target material by RF magnetron sputtering GaP infrared optical film prepared by maintaining the intensity of ArI750nm emission line constant obtained different process parameters, and the deposition process was simulated .When the power is small, the pressure is large , The sputtering rate, transport efficiency and deposition energy of Ga and P are small, the sputtering rate and transport efficiency of Ga are greater than P, the film deposition rate is low, the Ga content in the film Larger than P. The larger the power and the smaller the pressure, the higher the sputtering rate, the transport efficiency and the deposition energy of Ga and P, the higher the sputtering rate of Ga is higher than that of P , But its transport efficiency is less than P, the deposition rate of GaP film increases, the content of Ga and P in the film approaches stoichiometry, and the absorption of GaP film decreases, which is good for the preparation of GaP film with larger thickness.