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采用匀胶法制备了厚度在微米量级的Si/[TiO2/Al2O3]2TiO2和Si/[TiO2/MgO]2/TiO2多层介质膜反射镜.采用太赫兹(THz)时域透射光谱系统获得了多层膜的时域透射谱.用传输矩阵法模拟了Si/[TiO2/Al2O3]2TiO2和Si/[TiO2/MgO]2/TiO2两种分布式布拉格反射镜(DBR)的反射相移和相位穿透深度等光学特性.设计了两种结构为DBR/LT-GaAs/DBR的对称THz光学微腔结构并模拟了腔结构的辐射光谱.结果表明:通过引入谐振腔,两种DBR组成的微腔器件在谐振波长处的强度分别提高了19和14倍.其中Si/[TiO2/Al2O3]2TiO2/LT-GaAs(12μm)/[TiO2/Al2O3]2TiO2腔的辐射光谱存在两个峰,分别位于208和248μm,并分析了出现两个谐振峰的原因.探讨了通过引入介质谐振腔实现对THz源的辐射特性进行调控的可行性.
Si / [TiO2 / Al2O3] 2TiO2 and Si / [TiO2 / MgO] 2 / TiO2 multilayer dielectric mirrors with a thickness of micrometer were prepared by the spin coating method.Through the THz time-domain transmission spectroscopy system, The time-domain transmission spectra of multilayers were simulated by using the transfer matrix method. The phase shift of the two distributed Bragg reflectors (DBRs) of Si / [TiO2 / Al2O3] 2TiO2 and Si / [TiO2 / MgO] 2 / Phase penetration depth, etc. Two symmetrical THz optical microcavity structures with DBR / LT-GaAs / DBR structures were designed and the radiation spectra of the cavity structures were simulated.The results show that by introducing the resonant cavity, two kinds of DBR The intensity of the microcavity device at the resonant wavelength increased by 19 and 14 times, respectively. There are two peaks in the radiation spectrum of the Si / [TiO2 / Al2O3] 2TiO2 / LT-GaAs (12μm) / [TiO2 / Al2O3] 2TiO2 cavity, Located at 208 and 248 μm, and analyzed the reason why two resonance peaks appear.The feasibility of controlling the radiation characteristics of THz source by introducing dielectric resonator is discussed.