Ga As衬底与外延层质量 ,尤其是晶体的完整性严重影响着以其为材料的半导体器件的性能 ,而超声 AB腐蚀法是一种能准确快速的显示 Ga As体缺陷与器件外延层缺陷的检测法。本文提供了超声 AB腐蚀法显示 Ga As体缺陷与外延层缺陷的实例照片与工艺条件 ,并对其进行了分类 ,充分显示了它良好的可靠性 Ga As substrate and epitaxial layer quality, especially the integrity of the crystal seriously affect the performance of the semiconductor devices for its material, and ultrasonic AB etching method is an accurate and rapid display of Ga As body defects and device epitaxial layer defects Test method. This paper provides an example of the ultrasound ablation method for Ga As defects and epitaxial layer defects of the photo and the process conditions, and its classification, fully demonstrated its good reliability