提出了一种具有穿通基区的Si双极晶体管光探测器。通过优化器件结构参数，使基区在工作时完全耗尽，从而得到大的光增益和小的噪声电流。实验测光电转换增益大于150,000；器件具有良好的噪声特性，噪声功率与器件的直流偏置电流成正比，即in2=2qIcΔf。 A Si bipolar transistor photodetector with a through base region is proposed. By optimizing the device structure parameters, the base area is completely depleted during operation, resulting in large optical gain and small noise current. Experimental measurements photoelectric conversion gain greater than 150,000; device has good noise characteristics, the noise power and the device is proportional to the DC bias current, that is, in2 = 2qIcΔf.