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设计了一种工作在亚阈值区的高精度、低电压、低功耗CMOS基准电路。电路采用0.18μm CMOS工艺实现,在1.2V电源电压下,输出202mV的基准电压,在-40℃~130℃范围内的温度系数为6.5×10-5/℃,消耗2.46μA电流。电源电压从1.1V变化到3.6V时,输出基准电压仅变化0.336mV。该基准电路的电源电压抑制比(PSRR)在直流处达到-93dB,10MHz处达到-63dB。设计了一种多路快速启动电路,只需13μs即可完成启动。利用高阈值电压晶体管与普通阈值电压晶体管的Vth之差作为负温度系数电压源,使输出基准电压对工艺角不敏感。
A high-precision, low-voltage, low-power CMOS reference circuit designed to operate in the subthreshold region was designed. The circuit is implemented in a 0.18μm CMOS process and outputs a 202mV reference voltage at a 1.2V supply voltage with a temperature coefficient of 6.5 × 10-5 / ° C in the -40 ° C to 130 ° C range, consuming 2.46μA. When the supply voltage changes from 1.1V to 3.6V, the output reference voltage varies by only 0.336mV. The reference circuit’s supply voltage rejection ratio (PSRR) reaches -93dB at dc and -63dB at 10MHz. Designed a fast multi-channel start-up circuit, just 13μs to complete the start. The difference between Vth of the high threshold voltage transistor and the ordinary threshold voltage transistor is taken as the negative temperature coefficient voltage source so that the output reference voltage is insensitive to the process angle.