1.IGBT的特性绝缘双栅极晶体管(lusulated Gate Bipolar Transistor,IGBT),是一种集BJT的大电流密度和MOSFET等电压激励场控型器件优点于一体的高压、高速大功率器件。目前有用不同材料及工艺制作的IGBT,但它们均可被看做是一个MOSFET输入跟随一个双极型晶体管放大的复合结构。IGBT有三个电极(如图1所示),分别称为栅极G(控制极或门极)、集电极C(漏极)和发射极E(源极)。 1.IGBT Features Insulated dual gate transistor (IGBT) is a high-voltage, high-speed high-power device that combines the high current density of BJT with MOSFET and other voltage-excited field-controlled devices. There are currently IGBTs made from different materials and processes, but they can both be considered as a composite structure with a MOSFET input followed by a bipolar transistor amplification. IGBT has three electrodes (shown in Figure 1), respectively referred to as gate G (gate or gate), collector C (drain) and emitter E (source).