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在不同温度条件下对Cd0.9Zn0.1Te晶片进行In气氛退火热处理,显著提高了Cd0.9Zn0.1Te材料的电阻率。通过实验测量和理论建模计算,得到了1 073、1 023和973K条件下In原子在Cd0.9Zn0.1Te晶片中的扩散系数分别为4.25×10-9 cm2·s-1、9.02×10-10 cm2·s-1和2.17×10-10 cm2·s-1,并且拟合出了1 073~973K范围内扩散系数和温度之间的函数关系表达式D(T)=2.15×exp(-1.9/k0T)及频率因子D0等数据。最后,对实验结果进行了简要的对比和分析解释。
The Cd0.9Zn0.1Te wafers were annealed in an In atmosphere at different temperatures to significantly increase the resistivity of the Cd0.9Zn0.1Te material. The diffusion coefficients of In atoms in Cd0.9Zn0.1Te wafers at 1 073, 1 023 and 973K were obtained by experimental measurement and theoretical modeling respectively, and their diffusion coefficients were 4.25 × 10-9 cm2 · s-1,9.02 × 10- 10 cm2 · s-1 and 2.17 × 10-10 cm2 · s-1, and the relationship between the diffusion coefficient and the temperature in the range of 1 073 to 973 K is fitted as follows: D (T) = 2.15 × exp 1.9 / k0T) and frequency factor D0 and other data. Finally, the experimental results were briefly compared and analyzed.